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| inchange semiconductor product specification silicon npn power transistors BU100 description with to-3 package high voltage capability applications for horizontal deflection output stage of ctv receivers and high voltalge, fast switching and industrial applications pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(t c =25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 7 v i c collector current 10 a i cm collector current-peak 15 a p d total power dissipation t c =75 15 w t j junction temperature 200 t stg storage temperature -55~200 fig.1 simplified outline (to-3) and symbol www.datasheet.co.kr datasheet pdf - http://www..net/
inchange semiconductor product specification 2 silicon npn power transistors BU100 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ; i b =0 60 v v (br)cbo collector-base breakdown voltage i c =1ma; i e =0 150 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 7 v v ce (sat) collector-emitter saturation voltage i c =8a ;i b =2.5a 3.3 v v be (sat) base-emitter saturation voltage i c =8a ;i b =2.5a 2.2 v i cbo collector cut-off current v cb =120v; i e =0 10 a i ebo emitter cut-off current v eb =7v; i c =0 10 a h fe dc current gain i c =2a ; v ce =2v 40 90 f t transition frequency i c =0.5a ; v ce =10v;f=1mhz 0.1 mhz www.datasheet.co.kr datasheet pdf - http://www..net/ inchange semiconductor product specification 3 silicon npn power transistors BU100 package outline fig.2 outline dimensions www.datasheet.co.kr datasheet pdf - http://www..net/ |
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